de475-501n44a rfpowermosfet v dss = 500v i d25 = 48a r ds(on) 0.13 p dc = 1800w symbol testconditions maximumratings v dss t j =25cto150c 500 v v dgr t j =25cto150c;r gs =1m 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c =25c 48 a i dm t c =25c,pulsewidthlimitedbyt jm 288 a i ar t c =25c 44 a e ar t c =25c 30 mj dv/dt i s i dm ,di/dt ?100a/ s,v dd v dss , t j 150c,r g =0.2 5 v/ns i s =0 >200 v/ns p dc 1800 w p dhs t c =25c derate4.0w/cabove25c 730 w p damb t c =25c 4.5 w r thjc 0.08 c/w r thjhs 0.20 c/w symbol testconditions characteristicvalues t j =25cunlessotherwisespecified min. typ. max. v dss v gs =0v,i d =3ma 500 v v gs(th) v ds =v gs ,i d =4ma 3.5 4.5 5.5 v i gss v gs =20v dc ,v ds =0 100 na i dss v ds =0.8v dss t j =25c v gs =0t j =125c 50 1 a ma r ds(on) v gs =15v,i d =0.5i d25 pulsetest,t 300 s,dutycycled 2% 0.13 g fs v ds =15v,i d =0.5i d25 ,pulsetest 14 s t j 55 +175 c t jm 175 c t stg 55 +175 c t l 1.6mm(0.063in)fromcasefor10s 300 c weight 3 g features ? isolatedsubstrate ? highisolationvoltage(>2500v) ? excellentthermaltransfer ? increasedtemperatureandpower cyclingcapability ? ixysadvancedlowq g process ? lowgatechargeandcapacitances ? easiertodrive ? fasterswitching ? lowr ds(on) ? verylowinsertioninductance(<2nh) ? noberylliumoxide(beo)orotherhaz ardousmaterials advantages ? optimizedforrfandhighspeed switchingatfrequenciesto30mhz ? easytomountnoinsulatorsneeded ? highpowerdensity ? nchannelenhancementmode ? lowq g andr g ? highdv/dt ? nanosecondswitching ? 30mhzmaximumfrequency drain sg1 sg2 gate sd1 sd2
de475-501n44a rfpowermosfet symbol testconditions characteristicvalues ( t j =25cunlessotherwisespecified ) min. typ. max. r g 0.3 c iss 5100 pf c oss v gs =0v,v ds =0.8v dss(max) , f=1mhz 300 pf c rss 92 pf c stray backmetaltoanypin 46 pf t d(on) 5 ns t on v gs =15v,v ds =0.8v dss i d =0.5i dm r g =0.2 (external) 5 ns t d(off) 5 ns t off 8 ns q g(on) 155 nc q gs v gs =10v,v ds =0.5v dss i d =0.5i d25 35 nc q gd 87 nc sourcedraindiode characteristicvalues ( t j =25cunlessotherwisespecified ) symbol testconditions min. max. i s v gs =0v 44 a i sm repetitive;pulsewidthlimitedbyt jm 288 a v sd 1.5 v t rr 200 ns i f =i s ,v gs =0v, pulsetest,t 300 s,dutycycle 2% q rm i f =i s ,di/dt=100a/ s, v r =100v 0.6 c i rm 14 a ixysrfreservestherighttochangelimits,testc onditionsanddimensions. ixysrfmosfetsarecoveredbyoneormoreofthe followingu.s.patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5 ,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5 ,486,715 5,381,025 5,640,045 fordetaileddevicemountingandinstallationinstr uctions,seethe device installation & mounting instructions technicalnoteonthe ixysrfwebsiteat; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_ series_mosfet_installation_instructions.pdf caution:operationatorabovethemaximumratings valuesmayimpactdevicereliabilityorcauseperma nentdamagetothedevice. informationinthisdocumentisbelievedtobeaccu rateandreliable . ixysrfreservestherighttomakechangestoinform ationpub lishedinthisdocumentatanytimeandwithoutnot ice.
de475-501n44a rfpowermosfet v d s vs. capacitance 10 100 1000 10000 0 100 200 300 400 v ds voltage(v) capacitance(pf) extendedtypicaloutputcharacteristics 0 50 100 150 200 250 0 10 20 30 40 50 60 70 80 90 100 110 120 v ds ,draintosourcevoltage(v) i d ,draincurrnet(a) typicaltransfercharacteristics v ds =50v,pw=15s 0 20 40 60 80 100 120 140 160 5 6 7 8 9 10 11 12 13 14 15 v gs ,gatetosourcevoltage(v) i d ,draincurrent(a) gatechargevs.gatetosourcevoltage v ds =250v,i d =22a 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 gatecharge(nc) gatetosourcevoltage(v) typicaloutputcharacteristics 0 25 50 0 10 20 30 40 50 60 70 80 90 100 110 120 v ds ,draintosourcevoltage(v) i d ,draincurrnet(a) top 1015v 9v 8.5v 8v 7.5v 7v bottom 6.5v c rss c oss c iss 6v 8v15v 7.5v 7v 6.5v fig.4 fig.5 fig.1 fig.2 fig.3
de475-501n44a rfpowermosfet fig.6packagedrawing gate source source source source drain
de475-501n44a rfpowermosfet 501n44adeseriesspicemodel (preliminary) thedeseriesspicemodelisillustratedinfigure 7.themodelisanexpansionofthespice level3mosfetmodel.itincludesthestrayinducti vetermsl g ,l s andl d .rdisther ds(on) ofthe device,rdsistheresistiveleakageterm.theoutp utcapacitance,c oss ,andreversetransferca pacitance,c rss aremodeledwithreversedbiaseddiodes.thisprov idesavaractortyperesponse necessaryforahighpowerdevicemodel.theturno ndelayandtheturnoffdelayareadjustedvia ronandroff. figure7deseriesspicemodel thisspicemodelmaybedownloadedasatextfilef romtheixysrfwebsiteat http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de475501n44a.html netlist: .subckt501n44a102030 *terminals:dgs *500volt44amp0.13ohmnchannelpowermosf et *rev.a010902 m11233dmosl=1uw=1u ron560.3 don62d1 rof57.1 dof27d1 d1crs28d2 d2crs18d2 cgs235.2n rd410.13 dcos31d3 rds135.0meg ls330.5n ld1041n lg2051n .modeldmosnmos(level=3vto=3.0kp=3.8) .modeld1d(is=.5fcjo=1pbv=100m=.5vj=.6tt=1n) .modeld2d(is=.5fcjo=400pbv=500m=.4vj=.6tt=4 00nrs=10m) .modeld3d(is=.5fcjo=900pbv=500m=.3vj=.4tt=4 00nrs=10m) .ends doc#92000248rev6 ?2009ixysrf an ixys company 2401researchblvd.,suite108 fortcollins,cousa80526 9704931901fax:9704931903 email:sales@ixyscolorado.com web:http://www.ixyscolorado.com
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